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| d a t a sh eet preliminary speci?cation supersedes data of 1997 oct 09 file under integrated circuits, ic03 1999 jan 27 integrated circuits tea1102; TEA1102T; TEA1102Ts fast charge ics for nicd, nimh, sla and liion
1999 jan 27 2 philips semiconductors preliminary speci?cation fast charge ics for nicd, nimh, sla and liion tea1102; TEA1102T; TEA1102Ts features safe and fast charging of nickel cadmium (nicd), nickel metal hydride (nimh), lithium ion (liion), and sealed lead acid (sla) batteries three charge states for nicd or nimh; fast, top-off and trickle or voltage regulation (optional) two charge states for liion or sla; current and voltage limited adjustable fast charge current [0.5ca to 5ca nominal (ca = capacity amperes)] dc top-off and pulsating trickle charge current (nicd and nimh) temperature dependent d t/ d t battery full detection automatic switch-over to accurate peak voltage detection ( - 1 4 %) if no ntc is applied possibility to use both d t/ d t and peak voltage detection as main fast charge termination support of inhibit during all charging states manual refresh with regulated adjustable discharge current (nicd and nimh) voltage regulation in the event of no battery support of battery voltage based charge indication and buzzer signalling at battery insertion, end of refresh and at full detection single, dual and separate led outputs for indication of charge status state minimum and maximum temperature protection time-out protection short-circuit battery voltage protection can be applied with few low-cost external components. general description the tea1102x are fast charge ics which are able fast charge nicd and nimh, sla and lilon batteries. the main fast charge termination for nicd and nimh batteries are d t/ d t and peak voltage detection, both of which are well proven techniques. the tea1102x automatically switches over from d t/ d t to peak voltage detection if the thermistor fails or is not present. the d t/ d t detection sensitivity is temperature dependent, thus avoiding false charge termination. three charge states can be distinguished; fast, top-off and trickle. charging lilon and sla batteries is completely different. when the batteries reach their maximum voltage (adjustable), the tea1102x switches over from current regulation to voltage regulation. after a defined time period, which is dependent on battery capacity and charge current, charge is terminated. due to small self discharge rates of lilon and sla batteries, trickle charge can be omitted. several leds, as well as a buzzer, can be connected to the tea1102x for indicating battery insertion, charge states, battery full condition and protection mode. the tea1102x are contained in a 20-pin package and are manufactured in a bicmos process, essentially for integrating the complex mix of requirements in a single chip solution. only a few external low cost components are required in order to build a state of the art charger. ordering information type number package name description version tea1102 dip20 plastic dual in-line package; 20 leads (300 mil) sot 146-1 TEA1102T so20 plastic small outline package; 20 leads; body width 7.5 mm sot163-1 TEA1102Ts ssop20 plastic shrink small outline package; 20 leads; body width 5.3 mm sot339-1 1999 jan 27 3 philips semiconductors preliminary speci?cation fast charge ics for nicd, nimh, sla and liion tea1102; TEA1102T; TEA1102Ts quick reference data symbol parameter conditions min. typ. max. unit v p supply voltage 5.5 - 11.5 v i p supply current outputs off - 4 - ma d v ntc /v ntc temperature rate dependent ( d t/ d t) detection level v ntc =2v; t j = 0 to 50 c -- 0.25 - % d v bat /v bat voltage peak detection level with respect to top value v bat =2v; t j = 0 to 50 c -- 0.25 - % i vbat input current battery monitor v bat = 0.3 to 1.9 v - 1 - na v bat(l) voltage at pin 19 for detecting low battery voltage - 0.30 - v i ib battery charge current fast charge 10 - 100 m a top-off mode - 3 -m a i ib(max) maximum battery charge current voltage regulation full nicd and nimh battery - 10 -m a i ib(lmax) maximum load current no battery - 40 -m a f osc oscillator frequency 10 - 200 khz v reg regulating voltage liion - 1.37 - v sla - 1.63 - v nicd and nimh (pin v stb open-circuit) - 1.325 or v stb - v open battery - 1.9 - v 1999 jan 27 4 philips semiconductors preliminary speci?cation fast charge ics for nicd, nimh, sla and liion tea1102; TEA1102T; TEA1102Ts this text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the acrobat reader .this text is here in _ white to force landscape pages to be rotated correctly when browsing through the pdf in the acrobat reader.this text is here in this text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the acrobat reader. white to force land scape pages to be ... block diagram handbook, full pagewidth protection ntc present t cut-off battery low end refresh no- battery t min t max 0.3 v 1 v 1.9 v 3.3 v 2.8 v 1 v 0.75 v 4.25 v 156 k w 36 k w 12 k w da/ad converter 1.325 v/v stb nicd nimh 1.37 v llion 1.63 v sla 1.9 v no- battery v bat v reg charge control and output drivers fast charge 1.25/r ref top off 3 m a standby current 10 m a load current 40 m a 4.25 v r s q ls osc pwm set a1 a4 100 mv refresh control logic supply block timer and charge status indication v bat mtv ntc 9 8 v bat v stb r ref osc 19 1 20 14 15 17 18 10 2 4 5 6 7 pwm ls ao rfsh ib psd led pod ptd 12 13 16 11 3 v p v sl v s gnd fct tea1102 a2 a3 4 mgc818 fig.1 block diagram. 1999 jan 27 5 philips semiconductors preliminary speci?cation fast charge ics for nicd, nimh, sla and liion tea1102; TEA1102T; TEA1102Ts pinning symbol pin description v stb 1 standby regulation voltage input (nicd and nimh) ib 2 charge current setting gnd 3 ground psd 4 program pin sample divider led 5 led output pod 6 program pin oscillator divider ptd 7 program pin time-out divider ntc 8 temperature sensing input mtv 9 maximum temperature voltage rfsh 10 refresh input/output fct 11 fast charge termination and battery chemistry identi?cation v p 12 positive supply voltage v sl 13 switched reference voltage output osc 14 oscillator input pwm 15 pulse width modulator output v s 16 stabilized reference voltage ls 17 loop stability pin ao 18 analog output v bat 19 single-cell battery voltage input r ref 20 reference resistor pin fig.2 pin configuration. handbook, halfpage tea1102 mbh067 1 2 3 4 5 6 7 8 9 10 20 19 18 17 16 15 14 13 12 11 v stb r ref v bat v sl v p v s ao ls pwm osc fct ib gnd psd led pod ptd ntc mtv rfsh 1999 jan 27 6 philips semiconductors preliminary speci?cation fast charge ics for nicd, nimh, sla and liion tea1102; TEA1102T; TEA1102Ts introduction all battery types are initially fast charged with an adjustable high current. fast charge termination depends upon the battery type. with nicd and nimh batteries the main fast charge termination will be the d t/ d t (temperature detection) and/or peak voltage detection and with sla and liion batteries when the battery voltage reaches 2.45 or 4.1 v respectively. the fast charge period is followed by a top-off period for nicd and nimh batteries and by a fill-up period for sla and liion batteries. during the top-off period the nicd and nimh batteries are charged to maximum capacity by reduced adjustable charge current. during the fill-up period the sla and liion batteries are charged to maximum capacity by a constant voltage and a gradually decreasing current. the fill-up and top-off period ends after time-out or one hour respectively. after the fill-up or top-off period, the tea1102x switches over to the standby mode. for nicd and nimh batteries either the voltage regulation or trickle charge mode can be selected. the voltage regulation mode is selected when the battery includes a fixed load. trickle charge prevents a discharge of the battery over a long period of time. for sla and liion batteries the charge current is disabled during standby. the fast charge mode is entered again when the battery voltage reaches 1.5 v (sla) or 3 v (liion). charging principles c harging nicd/nimh batteries fast charging of the battery begins when the power supply voltage is applied and at battery insertion. during fast charge of nicd and nimh batteries, the battery temperature and voltage are monitored. outside the initialized temperature and voltage window, the system switches over to the top-off charge current. the tea1102x supports detection of fully charged nicd and nimh batteries by either of the following criteria: d t/ d t voltage peak detection. if the system is programmed with d t/ d t and v peak or, d t/ d t or v peak as the main fast charge termination, it automatically switches to voltage peak detection if the battery pack is not provided with a temperature sensing input (ntc). in this way both packages, with and without temperature sensor, can be used randomly independent of the applied full detection method. besides d t/ d t and/or voltage peak detection, fast charging is also protected by temperature cut-off and time-out. to avoid false fast charge termination by peak voltage detection or d t/ d t, full detection is disabled during a short hold-off period at the start of a fast charge session. after fast charge termination, the battery is extra charged by a top-off period. during this period of approximately one hour, the charge current is lowered thus allowing the battery to be charged to nearly 100% before the system switches over to standby. after the battery has been charged to nearly 100% by the top-off period, discharge of the battery (caused by a load or by the self-discharge) can be avoided by voltage regulation or by trickle charge. if batteries are charged in combination with a load, the tea1102x can be programmed to apply voltage regulation during the standby mode. in this way, discharge of the battery caused by self-discharge or by an eventual load is avoided. the regulating voltage is adjustable to the voltage characteristic of the battery. for battery safety the charge current is limited and the temperature is monitored during voltage regulation. if a trickle charge is applied, the self-discharge of the battery will be compensated by a pulsating charge current. to avoid the so called memory effect in nicd batteries, a refresh can be manually activated.the discharge current is regulated by the ic in combination with an external power transistor. after discharging the battery to 1 v per cell, the system automatically switches over to fast charge. c harging lii on /sla batteries charging these types of batteries differs considerably from charging nicd and nimh batteries. the batteries will be charged with a charge current of 0.15 ca if their cell voltage is below the minimum voltage of 0.9 v for lilon or 0.45 v for sla. with batteries in good condition the battery voltage will rise above 0.9 v in a short period of time. when the batteries are short-circuited the voltage will not rise above 0.9 v within one hour and the system will change over to cut-off, which means that the output drivers ao and pwm are fixed to zero and that battery charge can only be started again after a power-on reset. if the battery voltage of a good condition battery is above the minimum level of 0.9 v the battery will be charged with the programmed fast charge current. if lilon or sla batteries are used, full is detected when the battery voltage reaches 4.1 and 2.45 v respectively. at this point the tea1102x switches from current regulation to voltage regulation (fill-up mode). 1999 jan 27 7 philips semiconductors preliminary speci?cation fast charge ics for nicd, nimh, sla and liion tea1102; TEA1102T; TEA1102Ts after the fill-up period the charge current is not regulated, which means that the output drivers ao and pwm are fixed to zero. when the battery voltage becomes less than 3 v for lilon and 1.5 v for sla, the ic enters the fast charge mode again. functional description control logic the main function of the control logic is to support the communication between several blocks. it also controls the charge method, initialization and battery full detection. the block diagram of the tea1102x is illustrated in fig.1. conditioning charge method and initializations at system switch-on, or at battery insertion, the control logic sets the initialization mode in the timer block. after the initialization time the timer program pins can be used to indicate the charging state using several leds. the charge method is defined at the same time by the following methods: if the fct pin is 0 or 1.25 v, indicating that sla or liion batteries have to be charged, the battery will be charged by limit current and limit voltage regulation. without identification (fct pin floating), the system will charge the battery according to the charge characteristic of nicd and nimh batteries. the standby charge method (nicd and nimh), trickle charge or voltage regulation, is defined by the input pin v stb . by biasing this voltage with a set voltage, the output voltage will be regulated to the v stb set voltage. if this pin is connected to v s , or no ntc is connected the system applies trickle charge. if pin rfsh is connected to ground by depressing the switch, the tea1102x discharges the battery via an external transistor connected to pin rfsh. the discharge current is regulated with respect to the external (charge) sense resistor (r sense ). end-of-discharge is reached when the battery is discharged to 1 v per cell. refreshing the battery can only be activated during charging of nicd and nimh batteries. when charging liion and sla batteries, discharge before charge is disabled. the inhibit mode has the main priority. this mode is activated when the v stb input pin is connected to ground. inhibit can be activated at any charge/discharge state, whereby the output control signals will be zero, all leds will be disabled and the charger timings will be set on hold. table 1 gives an operational summary. table 1 functionality of program pins notes 1. where x = dont care. 2. not low means floating or high. 3. the ntc voltage has been to be less than 3.3 v, which indicates the presence of an ntc. 4. the ntc voltage is outside the window for ntc detection. 5. v stb has to be floating or set to a battery regulating voltage in accordance with the specification. function fct ntc rfsh v stb inhibit x (1) x (1) x (1) low liion and sla detection low x (1) x (1) x (1) refresh (nicd and nimh) not low (2) x (1) low not low d t/ d t detection ?oating note 3 not low not low d t/ d t and voltage peak detection high note 3 not low not low voltage peak detection not low note 4 not low not low trickle charge at standby not low x (1) not low high not low note 4 not low not low voltage regulation at standby not low note 3 not low ?oating (5) 1999 jan 27 8 philips semiconductors preliminary speci?cation fast charge ics for nicd, nimh, sla and liion tea1102; TEA1102T; TEA1102Ts supply block the supply block delivers the following outputs: a power-on reset pulse to reset all digital circuitry at battery insertion or supply switch-on. after a general reset the system will start fast charging the battery. a 4.25 v stabilized voltage source (v s ) is externally available. this source can be used to set the thermistor biasing, to initialize the programs, to supply the external circuitry for battery voltage based charge indication and to supply other external circuitry. a 4.25 v bias voltage (v sl ) is available for use for more indication leds. this output pin will be zero during the initialization period at start-up, thus avoiding any interference of the extra leds when initializing. charge control the charge current is sensed via a low-ohmic resistor (r sense ), see fig.4. a positive voltage is created across resistor r b by means of a current source i ref which is set by r ref in the event of fast charge and by an internal bias current source in the event of top-off and trickle charge (i ib ), see fig.1. the positive node of r b will be regulated to zero via error amplifier a1, which means that the voltage across r b and r sense will be the same. the fast charge current is defined by the following equation: (1) the output of amplifier a1 is available at the loop stability pin ls, consequently the time constant of the current loop can be set. when v peak (nicd and nimh) is applied, the current sensing for the battery voltage will be reduced, implying that the charge current will be regulated to zero during: (2) actually battery voltage sensing takes place in the last oscillator cycle of this period. to avoid modulation on the output voltage, the top-off charge current is dc regulated, defined by the following equation: (3) where: (4) the top-off charge current will be approximately 0.15 ca, which maximizes the charge in the battery under safe and slow charging conditions. the top-off charge period will be approximately one hour, so the battery will be extra i fast r sense r b i ref = t sense 2 10 pod t osc = i top off C r sense r b 310 6 C = t top off C 2 27 tod t osc = charged with approximately 0.15 q. in this way the battery is fully charged before the system switches over to standby. when pin 1 (v stb ) is connected to v s , or no ntc is connected the system compensates the (self) discharge of the battery by trickle charge. the trickle charge current will be pulsating, defined by the following equation: (5) during the non current periods at trickle charge the charge current is regulated to zero, so that the current for a load connected in series across the battery with the sense resistor will be supplied by the power supply and not by the battery. if at pin 1 (v stb ) a reference voltage is set in accordance with the specification, and no ntc is connected the charge mode will switch over from current to voltage regulation after top-off. the reference regulating voltage can be adjusted to the battery characteristic by external resistors connected to pin v stb . this reference voltage has to be selected in such a way that it equals the rest voltage of the battery. by using voltage regulation, the battery will not be discharged at a load occurrence. if the v stb input pin is floating, the tea1102x will apply voltage regulation at 1.325 v during the standby mode (nicd and nimh). the current during voltage regulation is limited to 0.5 ca. if the battery charge current is maximized to 0.5 ca for more than 2 hours charging will be stopped. moreover, if the temperature exceeds t max , charging will be stopped completely. as voltage regulation is referred to one cell, the voltage on the v bat pin must be the battery voltage divided by the number of cells (nicd and nimh). for liion or sla batteries, the battery is extra charged after full detection by constant voltage regulation during a certain fill-up period. liion and sla batteries have to identify themselves by an extra pin on the battery pack to ground, which is connected via a resistor to pin 11 (fct). as the battery voltage sense (v bat ) has to be normalized to a one cell voltage of nicd and nimh packages, the v bat input pin will be regulated to 1.367 and 1.633 v during fill-up for liion and sla respectively. in this way this system can accept a mixture of one liion, two sla and three nicd or nimh packages. after fill-up, charging of liion or sla batteries is disabled. the battery charge is then fixed to zero, ensuring maximum life-cycle of the battery. because of a fixed zero charge current, the battery will be discharged if a load is applied. i trickle r sense r b 15 16 ------ 10 6 C = 1999 jan 27 9 philips semiconductors preliminary speci?cation fast charge ics for nicd, nimh, sla and liion tea1102; TEA1102T; TEA1102Ts to ensure an eventual load during all charging states, the fast charge mode will be entered again if the battery voltage drops below 15 v for sla or 3 v for lilon. when charging, the standby mode (liion and sla) can only be entered after a certain period of time depending on time-out. the same applies for charging nicd or nimh batteries. to support full test of the tea1102x at application, the standby mode is also entered when v bat 1999 jan 27 11 philips semiconductors preliminary speci?cation fast charge ics for nicd, nimh, sla and liion tea1102; TEA1102T; TEA1102Ts at an increase of the battery voltage the 14-bit analog-to-digital convertor (adc) is refreshed with this new value. therefore, the digitized value always represents the maximum battery voltage. a decreased v bat voltage is not stored, but is compared to the stored value. full is detected when the voltage decrease of v bat is 1 4 % of the stored peak battery value. to avoid interference due to the resistance of the battery contacts during battery voltage sensing, the charge current is regulated to zero during t = 2 10 pod t osc , via the regulation pins ao and pwm. at the last period, the v bat voltage is sensed and stored in a sample-and-hold circuit. this approach ensures very accurate detection of the battery full condition (minus 1 4 %). when battery full is determined by d t/ d t, the voltage on the ntc pin is used as the input voltage to the ad/da convertor. the sampling time at d t/ d t sensing is given by the following equation: (9) after this initialized sample time the new temperature voltage is compared to the preceding ad/da voltage and the ad/da is refreshed with this new value. a certain increase of the temperature is detected as full battery, depending on the initialization settings. the decision of full detection by d t/ d t or v peak is digitally filtered thus avoiding false battery full detection. t sampling d t d t ------- ? ?? 2 17 pod psd t osc = output drivers the charge current regulation signal is available at two output pins, ao and pwm. a nalog output the analog control voltage output at pin 18 (ao) can be used to drive an opto-coupler in mains separated applications when an external resistor is connected between ao and the opto-coupler. the maximum current through the opto-coupler diode is 2 ma. the voltage gain of amplifier a2 is typical 11 db (times 3.5). the dc voltage transfer is given by the following equation: v ao = 3.5 (v ls - 1.35). the ao output can be used for: linear (dc) applications not mains isolated smps with a separate controller mains isolated smps, controlled by an opto-coupler. p ulse w idth m odulator (pwm) the ls voltage is compared internally with the oscillator voltage to deliver a pulse width modulated output at pwm (pin 15) to drive an output switching device in a smps converter application via a driver stage. the pwm output is latched to prevent multi-pulsing. the maximum duty factor is internally fixed to 79% (typ.). the pwm output can be used for synchronization and duty factor control of a primary smps via a pulse transformer. 1999 jan 27 12 philips semiconductors preliminary speci?cation fast charge ics for nicd, nimh, sla and liion tea1102; TEA1102T; TEA1102Ts limiting values in accordance with the absolute maximum rating system (iec 134); note 1. note 1. all voltages are measured with respect to ground; positive currents flow into the ic; all pins not mentioned in the voltage list are not allowed to be voltage driven. the voltage ratings are valid provided that other ratings are not violated; current ratings are valid provided that the power rating is not violated. quality specification general quality specification for integrated circuits: snw-fq-611e. symbol parameter conditions min. typ. max. unit voltages v p positive supply voltage - 0.5 - 11.5 v v oled output voltage at pin 5 - 0.5 - 15 v v n voltage at pins pwm, ls and ntc - 0.5 - +v s v v ib voltage at pin 2 - 0.5 - 1.0 v currents i vs current at pin 16 - 3 - +0.01 ma i vsl current at pin 13 - 1 - +0.3 ma i oled output current at pin 5 -- 12 ma i ao output current at pin 18 - 10 - +0.05 ma i opwm output current at pin 15 - 15 - +14 ma i rref current at pin 20 - 1 - +0.01 ma i p positive supply current t j < 100 c -- 30 ma i p(stb) supply standby current v p =4v - 35 45 m a dissipation p tot total power dissipation t amb = +85 c sot146-1 -- 1.2 w sot163-1 -- 0.6 w sot339-1 -- 0.45 w temperatures t amb operating ambient temperature - 20 - +85 c t j junction temperature -- +150 c t stg storage temperature - 55 - +150 c 1999 jan 27 13 philips semiconductors preliminary speci?cation fast charge ics for nicd, nimh, sla and liion tea1102; TEA1102T; TEA1102Ts characteristics v p = 10 v; t amb =25 c; r ref =62k w ; unless otherwise speci?ed. symbol parameter conditions min. typ. max. unit supplies; pins v p , v s, r ref and v sl v p supply voltage 5.5 - 11.5 v i p supply current outputs off; v p = 11.5 v - 46ma i stb standby current v p =4v - 35 45 m a v clamp clamping voltage (pin 12) i clamp = 30 ma 11.5 - 12.8 v v start start voltage 6.1 6.4 6.7 v v lsp low supply protection level 5.1 5.3 5.5 v v s source voltage (stabilized) i s = 2 ma 4.14 4.25 4.36 v v sl led source voltage i led =50 m a 4.05 4.25 4.45 v v ref reference voltage i ref =20 m a; v p = 10 v 1.21 1.25 1.29 v tc vref temperature coef?cient of the reference voltage t amb = 0 to 45 c; i ref =20 m a; v ref = 1.25 v 0 60 120 ppm/k d v ref / d v p power supply rejection ratio of the reference voltage f = 100 hz; v p =8v ; d v p = 2 v (p-p) - 46 -- db d v ref load rejection of source voltage d i s = 20 ma; v p =10v -- 5mv i rref current range of reference resistor 10 - 100 m a charge current regulation; pins ib and r ref i ib /i ref fast charge ratio v ib =0 i ref =10 m a 0.93 1.03 1.13 i ref = 100 m a 0.93 1.0 1.07 v thib threshold voltage at pin ib t amb =25 c - 2 - +2 mv t amb = 0 to 45 c - 3 - +3 mv i ib charge current top-off mode; v ib = 0 2.6 3.2 3.8 m a i ib(max) maximum charge current voltage regulation full nicd/nimh battery; v ib =0 9 10.5 12 m a i ib(lmax) maximum load current open battery; v ib = 0 34 42 50 m a i ib(li) input leakage current currentless mode -- 170 na refresh; pin rfsh v rsense sense resistor voltage i refresh =v ib / r sense ; refresh mode; i refresh =18ma 75 100 125 mv v rfsh refresh voltage for programming start of refresh nicd/nimh 0 - 250 mv v bat voltage at pin v bat for detecting end of refresh nicd/nimh 0.96 1.0 1.04 v i source(max) maximum source current v ib =75mv; v p =10v; v rfsh = 2.7 v; t amb =25 c 1.4 2 2.6 ma 1999 jan 27 14 philips semiconductors preliminary speci?cation fast charge ics for nicd, nimh, sla and liion tea1102; TEA1102T; TEA1102Ts v rfsh(max) maximum refresh voltage i rfsh = 1 ma 2.7 -- v v rfsh(off) voltage at pin rfsh when refresh is off 700 770 840 mv temperature related inputs; pins ntc and mtv v ntch input voltage at pin ntc for detecting high temperature pin mtv open-circuit 0.9 1 1.1 v mtv setting 0.95mtv mtv 1.05mtv v v ntch(hy) hysteresis of v ntch - 80 - mv v ntcl input voltage at pin ntc, detecting low temperature 2.7 2.8 2.9 v v ntcl(hy) hysteresis of v ntcl - 75 - mv v ntc(co) input voltage at pin ntc for detecting temperature cut-off 0.7mtv 0.75mtv 0.8mtv v v ntc(bat) maximum input voltage at pin ntc for detecting battery with ntc 3.22 3.3 3.38 v i ntc input current at pin ntc v ntc =2v - 5 - +5 m a v mtv voltage level at pin mtv default (open-circuit) 0.95 1 1.05 v 0.5 - 2.5 v d v ntc /v ntc d t/ d t detection level v ntc =2v; t j = 0 to 50 c -- 0.25 - % voltage regulation v reg regulation voltage liion; i ref =20 m a 1.34 1.37 1.40 v sla; i ref =20 m a 1.59 1.63 1.67 v nicd and nimh; pin v stb open-circuit 1.30 1.325 1.35 v nicd and nimh; v stb = 1.5 v 0.99v stb v stb 1.01v stb v open battery 1.86 1.9 1.94 v tc vreg temperature coef?cient of regulation voltage v reg = 1.37 v; t amb = 0 to 45 c 0 60 120 ppm/k g m transconductance of ampli?er a3 v bat = 1.9 v; no battery mode - 2.0 - ma/v program pin v stb v stb open voltage at pin v stb 1.30 1.325 1.35 v v stb(im) voltage at pin v stb for programming inhibit mode 0 - 0.8 v v stb(st) voltage at pin v stb for programming voltage regulation at standby nicd and nimh 1.0 - 2.2 v v stb(tc) voltage at pin v stb for programming trickle charge at standby nicd and nimh 2.6 - v s v symbol parameter conditions min. typ. max. unit 1999 jan 27 15 philips semiconductors preliminary speci?cation fast charge ics for nicd, nimh, sla and liion tea1102; TEA1102T; TEA1102Ts program pins; psd, pod and ptd v 4,6,7 voltage level at pins psd, pod or ptd default (open-circuit) 1.9 2.1 2.3 v v 4,6,7(1) voltage level at pins psd, pod or ptd for programming the divider = 1 0 - 1.2 v v 4,6,7(2) voltage level at pins psd, pod or ptd for programming the divider = 2 1.6 - 2.5 v v 4,6,7(4) voltage level at pins psd, pod or ptd for programming the divider = 4 3.1 - v s v i podsink protection current for multi-led indication v pod = 1.5 v 8 10 12 ma i ptdsink full battery current for multi-led indication v ptd = 1.5 v 8 10 12 ma i psdsink refresh current for multi-led indication v psd = 1.5 v 8 10 12 ma i li input leakage current v pod = 4.25 v; v ptd = 4.25 v; v psd = 4.25 v 0 - 50 m a program pin fct v fct(sla) voltage level for detecting an sla battery 0 - 0.7 v v fct(lilon) voltage level for detecting a liion battery 0.9 - 1.6 v v fct(or) voltage level for programming d t/ d t or v peak as fast charge termination nicd and nimh 2.0 - 3.3 v v fct(and) voltage level for programming d t/ d t and v peak as fast charge termination nicd and nimh 3.7 - v s v v fct voltage level at pin fct default (open-circuit) 2.3 2.6 2.9 v program pin led v led(m) output voltage level for programming multi-led indication 0 - 2.5 v v led(s) output voltage level for programming single led indication 3.1 - v p v i sink(max) maximum sink current v led = 1.5 v 8 10 12 ma i li(led) input leakage current v led =10v 0 - 70 m a v led = 0.6 v 0 - 5 m a v o(max) maximum output voltage -- 15 v symbol parameter conditions min. typ. max. unit 1999 jan 27 16 philips semiconductors preliminary speci?cation fast charge ics for nicd, nimh, sla and liion tea1102; TEA1102T; TEA1102Ts output drivers; ao, ls and pwm i ao(source) analog output source current v ao = 3 v (p-p); v ls = 2.8 v - 9 - 0ma i ao(sink) analog output sink current v ao = 3 v (p-p); v ls = 1.2 v 50 --m a g m1 transconductance of ampli?er a1 v ib =50mv - 250 -m a/v g v1,2 voltage gain of ampli?ers a1 and a2 v ao = 3 v (p-p) - 72 - db g v2 voltage gain of ampli?er a2 v ao = 2 v (p-p) - 11 - db i ls(source) maximum source current (pin ls) v ls = 2.25 v - 25 - 21 - 16 m a i ls(sink) maximum sink current (pin ls) v ls = 2.25 v 16 21 25 m a i oh(pwm) high level output current v pwm =3v - 19 - 15 - 11 ma i ol(pwm) low level output current v pwm =0.7v 101418ma d pwm maximum duty factor - 79 - % battery monitor; v bat i vbat battery monitor input current v bat = 1.85 v - 1 - na v bat voltage range of v peak detection 0.3 - 2v d v bat /v bat v peak detection level with respect to top level v bat = 1.85 v; t j =0to50 c -- 0.25 - % d v bat voltage resolution for v peak - 0.6 - mv protections; v bat v bat(l) maximum voltage at pin v bat for detecting low battery voltage 0.25 0.30 0.35 v oscillator; pin osc v osc(h) high level oscillator switching voltage - 2.5 - v v osc(l) low level oscillator switching voltage - 1.5 - v f osc(min) minimum oscillator frequency r ref = 125 k w; c osc = 400 pf 20.9 23 25.1 khz f osc(max) maximum oscillator frequency r ref = 12.5 k w; c osc = 400 pf 158 174 190 khz symbol parameter conditions min. typ. max. unit 1999 jan 27 17 philips semiconductors preliminary speci?cation fast charge ics for nicd, nimh, sla and liion tea1102; TEA1102T; TEA1102Ts this text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the acrobat reader .this text is here in _ white to force landscape pages to be rotated correctly when browsing through the pdf in the acrobat reader.this text is here in this text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the acrobat reader. white to force land scape pages to be ... application information handbook, full pagewidth mbh068 v p 12 13 v s 16 ntc 8 c3 100 nf 4.25 v ntc 10 k w (25 o c) r19 75 k w mtv 9 fct 11 v stb 1 v bat 19 r ref 20 osc 14 gnd 3 r16 r15 270 w r24 80 k w (0.1%) r17 r20 d t/ d t and v peak d t/ d t or v peak lilon sla r21 p2 r22 p1 t max adjust. v reg adjust. 8.2 k w 130 k w r18 24 k w 47 k w 47 k w 16 k w 15 k w 12 k w r sense (1a refresh) r14 0.1 w (1) nicd 9 nicd nimh 3/6/9 cell sla 2/4/6 cell lilon 1/2/3 cell nimh 9 sla 6 lilon 3 nicd 6 nimh 6 sla 4 lilon 2 nicd 3 nimh 3 (3) sla 2 lilon 1 r25 40 k w (0.1%) r23 62 k w (1a fast charge) c4 220 pf c5 470 m f r26 8 k w (0.1%) r28 10 k w (0.1%) r27 8 k w (0.1%) v sl 5 led :4 :1 6 pod v s gnd protection d5 fast d4 d8 33 k w r6 33 k w r7 :4 :1 7 ptd v s gnd 100% d6 d2 d3 baw62 33 k w r8 33 k w r9 :4 :1 4 psd 15 pwm smps mode linear mode 18 ao 17 ls 10 rfsh 2 ib v s gnd refresh d6 33 k w r10 33 k w r11 single multi led r5 750 w r2 62 w r1 1 k w r3 1.5 k w no- battery tr3 bc337 tr2 bc337 c1 100 m f tr1 bd231 d1 byd74d v i (dc) > 13v r4 3.9 k w l1 (smps only) v i (dc) 7 to 18 v 400 m h byv28 (only for more than 3 cells r13 (2) 5.1 k w (0.15a top off) c2 1.5 nf r12 0 w (r b ) tea1102 refresh tr4 tip110 6 k w load only for fig.4 basic test board diagram. (1) or if not applicable. (2) (3) r14 100 mv i refresh -------------------- = r14 100 mv i fast ch e arg C ----------------------------- = r13 r14 i top off C 3 m a ------------------------------------ = r23 1.25 r13 r14 i fast ch e arg C ----------------------------------------------- = 1999 jan 27 18 philips semiconductors preliminary speci?cation fast charge ics for nicd, nimh, sla and liion tea1102; TEA1102T; TEA1102Ts fig.5 linear application diagram. handbook, full pagewidth mbh069 13 12 v p r10 200 k w (1%) r9 100 k w (0.1%) v sl 16 v s 8 ntc 9 mtv 11 fct 1 v stb 19 v bat 20 r ref 14 osc 3 gnd 5 led (r supply = 270 w for more than 3 nicd cells) (d2 for more than 3 nicd cells) d1 pod ptd 6 7 tea1102 v s gnd v s gnd psd 4 pwm 15 ao 18 rfsh 10 ls 17 ib 2 v s gnd :4 :1 :4 :1 :4 :1 r4 5.1 k w (75 ma top off) (r b ) tr2 bc337 r3 180 w c2 1.5 nf r5 0.22 w r sense r1 1 k w r2 1.5 k w r6 10 k w tr1 bd231 v i (dc) 7 to 11.5 v c1 100 m f c5 470 m f c3 100 nf 4.25 v sla = 0 w lilion = 4.3 k w nicd/nimh = r7 c4 220 pf (f osc = 75 khz) r8 62 k w (0.5 a fast charge) - battery + battery nicd nimh 3 cells sla 2 cells lilon 1 cell 1999 jan 27 19 philips semiconductors preliminary speci?cation fast charge ics for nicd, nimh, sla and liion tea1102; TEA1102T; TEA1102Ts fig.6 component side of printed-circuit board (test board). handbook, full pagewidth mbh073 tea1102 test board, v2 jb d&a nijmegen r28 r6 v sense d1 r14 d3 d2 d6 d5 d4 d7 r19 r2 c3 c7 r26 1l 2l 3l r27 r25 p2 v stb r24 c6 c4 c2 r16 r17 r20 r21 r22 r29 r12 r10 r4 r3 r15 r23 r30 r13 gnd gnd i b v sl r11 r7 r8 r9 r18 r5 mtv fct sla li-ion dt/dt or v dt/dt and v tr2 number of cells lin pwm pwm ntc ntc p1 refresh fast-charge protection 100% no-battery - v in - bat + v in + v s + bat 1 ptd l1 d8 tr1 tr4 tr3 r1 c1 c5 refresh d9 d10 lin :4psd:1 :4pod:1 s-led-m v bat 1999 jan 27 20 philips semiconductors preliminary speci?cation fast charge ics for nicd, nimh, sla and liion tea1102; TEA1102T; TEA1102Ts fig.7 track side of printed-circuit board (test board). handbook, full pagewidth mbh072 86.35 81.28 dimensions in mm. 1999 jan 27 21 philips semiconductors preliminary speci?cation fast charge ics for nicd, nimh, sla and liion tea1102; TEA1102T; TEA1102Ts fig.8 component side of printed-circuit board (linear application) scale 1 : 1. handbook, full pagewidth mbh071 tea1102 linear jb d&a cic nijm + v in + battery - v in - battery tr1 r1 r8 r3 r2 r4 r5 r6 c3 c4 c5 c2 r7 r9 r10 d1 psd pod ptd :1 :4 c1 1 tr2 fig.9 track side of printed-circuit board (linear application) scale 1 : 1. handbook, full pagewidth mbh070 tea1102 linear jb d&a cic nijm 1999 jan 27 22 philips semiconductors preliminary speci?cation fast charge ics for nicd, nimh, sla and liion tea1102; TEA1102T; TEA1102Ts package outlines unit a max. 1 2 b 1 cd e e m h l references outline version european projection issue date iec jedec eiaj mm inches dimensions (inch dimensions are derived from the original mm dimensions) sot146-1 92-11-17 95-05-24 a min. a max. b z max. w m e e 1 1.73 1.30 0.53 0.38 0.36 0.23 26.92 26.54 6.40 6.22 3.60 3.05 0.254 2.54 7.62 8.25 7.80 10.0 8.3 2.0 4.2 0.51 3.2 0.068 0.051 0.021 0.015 0.014 0.009 1.060 1.045 0.25 0.24 0.14 0.12 0.01 0.10 0.30 0.32 0.31 0.39 0.33 0.078 0.17 0.020 0.13 sc603 m h c (e ) 1 m e a l seating plane a 1 w m b 1 e d a 2 z 20 1 11 10 b e pin 1 index 0 5 10 mm scale note 1. plastic or metal protrusions of 0.25 mm maximum per side are not included. (1) (1) (1) dip20: plastic dual in-line package; 20 leads (300 mil) sot146-1 1999 jan 27 23 philips semiconductors preliminary speci?cation fast charge ics for nicd, nimh, sla and liion tea1102; TEA1102T; TEA1102Ts unit a max. a 1 a 2 a 3 b p cd (1) e (1) (1) eh e ll p q z y w v q references outline version european projection issue date iec jedec eiaj mm inches 2.65 0.30 0.10 2.45 2.25 0.49 0.36 0.32 0.23 13.0 12.6 7.6 7.4 1.27 10.65 10.00 1.1 1.0 0.9 0.4 8 0 o o 0.25 0.1 dimensions (inch dimensions are derived from the original mm dimensions) note 1. plastic or metal protrusions of 0.15 mm maximum per side are not included. 1.1 0.4 sot163-1 10 20 w m b p detail x z e 11 1 d y 0.25 075e04 ms-013ac pin 1 index 0.10 0.012 0.004 0.096 0.089 0.019 0.014 0.013 0.009 0.51 0.49 0.30 0.29 0.050 1.4 0.055 0.419 0.394 0.043 0.039 0.035 0.016 0.01 0.25 0.01 0.004 0.043 0.016 0.01 0 5 10 mm scale x q a a 1 a 2 h e l p q e c l v m a (a ) 3 a so20: plastic small outline package; 20 leads; body width 7.5 mm sot163-1 95-01-24 97-05-22 1999 jan 27 24 philips semiconductors preliminary speci?cation fast charge ics for nicd, nimh, sla and liion tea1102; TEA1102T; TEA1102Ts unit a 1 a 2 a 3 b p cd (1) e (1) eh e ll p q (1) z y w v q references outline version european projection issue date iec jedec eiaj mm 0.21 0.05 1.80 1.65 0.38 0.25 0.20 0.09 7.4 7.0 5.4 5.2 0.65 7.9 7.6 0.9 0.7 0.9 0.5 8 0 o o 0.13 1.25 0.2 0.1 dimensions (mm are the original dimensions) note 1. plastic or metal protrusions of 0.20 mm maximum per side are not included. 1.03 0.63 sot339-1 mo-150ae 93-09-08 95-02-04 x w m q a a 1 a 2 b p d h e l p q detail x e z e c l v m a (a ) 3 a 110 20 11 y 0.25 pin 1 index 0 2.5 5 mm scale ssop20: plastic shrink small outline package; 20 leads; body width 5.3 mm sot339-1 a max. 2.0 1999 jan 27 25 philips semiconductors preliminary speci?cation fast charge ics for nicd, nimh, sla and liion tea1102; TEA1102T; TEA1102Ts soldering introduction this text gives a very brief insight to a complex technology. a more in-depth account of soldering ics can be found in our data handbook ic26; integrated circuit packages (document order number 9398 652 90011). there is no soldering method that is ideal for all ic packages. wave soldering is often preferred when through-hole and surface mount components are mixed on one printed-circuit board. however, wave soldering is not always suitable for surface mount ics, or for printed-circuit boards with high population densities. in these situations reflow soldering is often used. through-hole mount packages s oldering by dipping or by solder wave the maximum permissible temperature of the solder is 260 c; solder at this temperature must not be in contact with the joints for more than 5 seconds. the total contact time of successive solder waves must not exceed 5 seconds. the device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (t stg(max) ). if the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. m anual soldering apply the soldering iron (24 v or less) to the lead(s) of the package, either below the seating plane or not more than 2 mm above it. if the temperature of the soldering iron bit is less than 300 c it may remain in contact for up to 10 seconds. if the bit temperature is between 300 and 400 c, contact may be up to 5 seconds. surface mount packages r eflow soldering reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. several methods exist for reflowing; for example, infrared/convection heating in a conveyor type oven. throughput times (preheating, soldering and cooling) vary between 100 and 200 seconds depending on heating method. typical reflow peak temperatures range from 215 to 250 c. the top-surface temperature of the packages should preferable be kept below 230 c. w ave soldering conventional single wave soldering is not recommended for surface mount devices (smds) or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems. to overcome these problems the double-wave soldering method was specifically developed. if wave soldering is used the following conditions must be observed for optimal results: use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave. for packages with leads on two sides and a pitch (e): C larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be parallel to the transport direction of the printed-circuit board; C smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the transport direction of the printed-circuit board. the footprint must incorporate solder thieves at the downstream end. for packages with leads on four sides, the footprint must be placed at a 45 angle to the transport direction of the printed-circuit board. the footprint must incorporate solder thieves downstream and at the side corners. during placement and before soldering, the package must be fixed with a droplet of adhesive. the adhesive can be applied by screen printing, pin transfer or syringe dispensing. the package can be soldered after the adhesive is cured. typical dwell time is 4 seconds at 250 c. a mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. m anual soldering fix the component by first soldering two diagonally-opposite end leads. use a low voltage (24 v or less) soldering iron applied to the flat part of the lead. contact time must be limited to 10 seconds at up to 300 c. when using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 c. 1999 jan 27 26 philips semiconductors preliminary speci?cation fast charge ics for nicd, nimh, sla and liion tea1102; TEA1102T; TEA1102Ts suitability of ic packages for wave, re?ow and dipping soldering methods notes 1. all surface mount (smd) packages are moisture sensitive. depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). for details, refer to the drypack information in the data handbook ic26; integrated circuit packages; section: packing methods . 2. for sdip packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board. 3. these packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink (at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version). 4. if wave soldering is considered, then the package must be placed at a 45 angle to the solder wave direction. the package footprint must incorporate solder thieves downstream and at the side corners. 5. wave soldering is only suitable for lqfp, qfp and tqfp packages with a pitch (e) equal to or larger than 0.8 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm. 6. wave soldering is only suitable for ssop and tssop packages with a pitch (e) equal to or larger than 0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm. definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. mounting package soldering method wave reflow (1) dipping through-hole mount dbs, dip, hdip, sdip, sil suitable (2) - suitable surface mount hlqfp, hsqfp, hsop, sms not suitable (3) suitable - plcc (4) , so suitable suitable - lqfp, qfp, tqfp not recommended (4)(5) suitable - sqfp not suitable suitable - ssop, tssop, vso not recommended (6) suitable - data sheet status objective speci?cation this data sheet contains target or goal speci?cations for product development. preliminary speci?cation this data sheet contains preliminary data; supplementary data may be published later. product speci?cation this data sheet contains ?nal product speci?cations. limiting values limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the speci?cation. 1999 jan 27 27 philips semiconductors preliminary speci?cation fast charge ics for nicd, nimh, sla and liion tea1102; TEA1102T; TEA1102Ts notes internet: http://www.semiconductors.philips.com philips semiconductors C a worldwide company ? philips electronics n.v. 1999 sca61 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owne r. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reli able and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not con vey nor imply any license under patent- or other industrial or intellectual property rights. middle east: see italy netherlands: postbus 90050, 5600 pb eindhoven, bldg. vb, tel. +31 40 27 82785, fax. +31 40 27 88399 new zealand: 2 wagener place, c.p.o. box 1041, auckland, tel. +64 9 849 4160, fax. +64 9 849 7811 norway: box 1, manglerud 0612, oslo, tel. +47 22 74 8000, fax. +47 22 74 8341 pakistan: see singapore philippines: philips semiconductors philippines inc., 106 valero st. salcedo village, p.o. box 2108 mcc, makati, metro manila, tel. +63 2 816 6380, fax. +63 2 817 3474 poland: ul. lukiska 10, pl 04-123 warszawa, tel. +48 22 612 2831, fax. +48 22 612 2327 portugal: see spain romania: see italy russia: philips russia, ul. usatcheva 35a, 119048 moscow, tel. +7 095 755 6918, fax. +7 095 755 6919 singapore: lorong 1, toa payoh, singapore 319762, tel. +65 350 2538, fax. +65 251 6500 slovakia: see austria slovenia: see italy south africa: s.a. philips pty ltd., 195-215 main road martindale, 2092 johannesburg, p.o. box 7430 johannesburg 2000, tel. +27 11 470 5911, fax. +27 11 470 5494 south america: al. vicente pinzon, 173, 6th floor, 04547-130 s?o paulo, sp, brazil, tel. +55 11 821 2333, fax. +55 11 821 2382 spain: balmes 22, 08007 barcelona, tel. +34 93 301 6312, fax. +34 93 301 4107 sweden: kottbygatan 7, akalla, s-16485 stockholm, tel. +46 8 5985 2000, fax. +46 8 5985 2745 switzerland: allmendstrasse 140, ch-8027 zrich, tel. +41 1 488 2741 fax. +41 1 488 3263 taiwan: philips semiconductors, 6f, no. 96, chien kuo n. rd., sec. 1, taipei, taiwan tel. +886 2 2134 2865, fax. +886 2 2134 2874 thailand: philips electronics (thailand) ltd., 209/2 sanpavuth-bangna road prakanong, bangkok 10260, tel. +66 2 745 4090, fax. +66 2 398 0793 turkey: talatpasa cad. no. 5, 80640 gltepe/istanbul, tel. +90 212 279 2770, fax. +90 212 282 6707 ukraine : philips ukraine, 4 patrice lumumba str., building b, floor 7, 252042 kiev, tel. +380 44 264 2776, fax. +380 44 268 0461 united kingdom: philips semiconductors ltd., 276 bath road, hayes, middlesex ub3 5bx, tel. +44 181 730 5000, fax. +44 181 754 8421 united states: 811 east arques avenue, sunnyvale, ca 94088-3409, tel. +1 800 234 7381, fax. +1 800 943 0087 uruguay: see south america vietnam: see singapore yugoslavia: philips, trg n. pasica 5/v, 11000 beograd, tel. +381 11 62 5344, fax.+381 11 63 5777 for all other countries apply to: philips semiconductors, international marketing & sales communications, building be-p, p.o. box 218, 5600 md eindhoven, the netherlands, fax. +31 40 27 24825 argentina: see south america australia: 34 waterloo road, north ryde, nsw 2113, tel. +61 2 9805 4455, fax. +61 2 9805 4466 austria: computerstr. 6, a-1101 wien, p.o. box 213, tel. +43 1 60 101 1248, fax. +43 1 60 101 1210 belarus: hotel minsk business center, bld. 3, r. 1211, volodarski str. 6, 220050 minsk, tel. +375 172 20 0733, fax. +375 172 20 0773 belgium: see the netherlands brazil: see south america bulgaria: philips bulgaria ltd., energoproject, 15th floor, 51 james bourchier blvd., 1407 sofia, tel. +359 2 68 9211, fax. +359 2 68 9102 canada: philips semiconductors/components, tel. +1 800 234 7381, fax. +1 800 943 0087 china/hong kong: 501 hong kong industrial technology centre, 72 tat chee avenue, kowloon tong, hong kong, tel. +852 2319 7888, fax. +852 2319 7700 colombia: see south america czech republic: see austria denmark: sydhavnsgade 23, 1780 copenhagen v, tel. +45 33 29 3333, fax. +45 33 29 3905 finland: sinikalliontie 3, fin-02630 espoo, tel. +358 9 615 800, fax. +358 9 6158 0920 france: 51 rue carnot, bp317, 92156 suresnes cedex, tel. +33 1 4099 6161, fax. +33 1 4099 6427 germany: hammerbrookstra?e 69, d-20097 hamburg, tel. +49 40 2353 60, fax. +49 40 2353 6300 greece: no. 15, 25th march street, gr 17778 tavros/athens, tel. +30 1 489 4339/4239, fax. +30 1 481 4240 hungary: see austria india: philips india ltd, band box building, 2nd floor, 254-d, dr. annie besant road, worli, mumbai 400 025, tel. +91 22 493 8541, fax. +91 22 493 0966 indonesia: pt philips development corporation, semiconductors division, gedung philips, jl. buncit raya kav.99-100, jakarta 12510, tel. +62 21 794 0040 ext. 2501, fax. +62 21 794 0080 ireland: newstead, clonskeagh, dublin 14, tel. +353 1 7640 000, fax. +353 1 7640 200 israel: rapac electronics, 7 kehilat saloniki st, po box 18053, tel aviv 61180, tel. +972 3 645 0444, fax. +972 3 649 1007 italy: philips semiconductors, piazza iv novembre 3, 20124 milano, tel. +39 2 6752 2531, fax. +39 2 6752 2557 japan: philips bldg 13-37, kohnan 2-chome, minato-ku, tokyo 108-8507, tel. +81 3 3740 5130, fax. +81 3 3740 5077 korea: philips house, 260-199 itaewon-dong, yongsan-ku, seoul, tel. +82 2 709 1412, fax. +82 2 709 1415 malaysia: no. 76 jalan universiti, 46200 petaling jaya, selangor, tel. +60 3 750 5214, fax. +60 3 757 4880 mexico: 5900 gateway east, suite 200, el paso, texas 79905, tel. +9-5 800 234 7381, fax +9-5 800 943 0087 printed in the netherlands 465002/750/04/pp28 date of release: 1999 jan 27 document order number: 9397 750 04793 |
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